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Oxygen participation in the formation of the photoluminescence W center and the center’s origin in ion-implanted silicon crystals
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10.1063/1.120990
/content/aip/journal/apl/72/11/10.1063/1.120990
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/11/10.1063/1.120990
/content/aip/journal/apl/72/11/10.1063/1.120990
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/content/aip/journal/apl/72/11/10.1063/1.120990
1998-03-16
2015-03-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen participation in the formation of the photoluminescence W center and the center’s origin in ion-implanted silicon crystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/11/10.1063/1.120990
10.1063/1.120990
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