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Control and imaging of ferroelectric domains over large areas with nanometer resolution in atomically smooth epitaxial thin films
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11.The calculated curve has only one free parameter, the main peak intensity.
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12.The parameters necessary to polarize ferroelectric domains were established by writing an area of the film with the AFM tip while ramping the voltage applied to the tip continuously from to The resulting phase image reveals, for the PZT thickness used here, a coercive voltage of to polarize ferroelectric domains.
13.To ensure the complete writing of the area, each square was written over a area, with an overlap of 1 μm on two of the sides of each square. The film was polarized negative when starting the experiments.
14.The different writing times used in this experiment, typically 10–50 ms, gave no difference in the measured domain size.
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