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Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
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10.1063/1.121162
/content/aip/journal/apl/72/14/10.1063/1.121162
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/14/10.1063/1.121162
/content/aip/journal/apl/72/14/10.1063/1.121162
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/content/aip/journal/apl/72/14/10.1063/1.121162
1998-04-06
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/14/10.1063/1.121162
10.1063/1.121162
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