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Electrical and physical characterization of deuterium sinter on submicron devices
1.J. Lyding, K. Hess, and I. Kizilyalli, Appl. Phys. Lett. 68, 2526 (1996).
2.I. Kizilyalli, J. Lyding, and K. Hess, IEEE Electron Device Lett. 18, 81 (1997).
3.H. C. Mogul, T. A. Rost, and D. G. Lin, IEEE Trans. Electron Devices 44, 388 (1997).
4.C. T. Sah, IRE Trans. Electron Devices 9, 92 (1962).
5.C. T. Sah, A. Neugroschel, K. Han, and J. Kavalieros, IEEE Electron Device Lett. 17, 72 (1996).
6.H-implant in Si: standard reference material, Charles Evans & Associates, Redwood City, CA.
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