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Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy
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10.1063/1.121241
/content/aip/journal/apl/72/16/10.1063/1.121241
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/16/10.1063/1.121241
/content/aip/journal/apl/72/16/10.1063/1.121241
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/content/aip/journal/apl/72/16/10.1063/1.121241
1998-04-20
2014-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/16/10.1063/1.121241
10.1063/1.121241
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