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Truly ohmic contacts in engineered Al/Si/InGaAs(001) diodes
1.See, e.g., B. L. Sharma, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1981), Vol. 15, p. 1.
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8. was calculated according to S. Paul, J. B. Roy, and E. P. K. Basn, J. Appl. Phys. 69, 827 (1991) using the nominal In concentration. was measured on metal-free surfaces and showed negligible dependence on the In content in the studied range. We found and for the Ga In and In core-level emissions, respectively.
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11.The values used for and ε were obtained by linear interpolation between the corresponding InAs and GaAs parameters.
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