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Homoepitaxy of 6H and 4H SiC on nonplanar substrates
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10.1063/1.120683
/content/aip/journal/apl/72/2/10.1063/1.120683
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/2/10.1063/1.120683
/content/aip/journal/apl/72/2/10.1063/1.120683
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/content/aip/journal/apl/72/2/10.1063/1.120683
1998-01-12
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Homoepitaxy of 6H and 4H SiC on nonplanar substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/2/10.1063/1.120683
10.1063/1.120683
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