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On the feasibility of using ultraviolet/ozone grown oxide as an atomic interdiffusion barrier in Ge/GaAs heterojunctions
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10.1063/1.121104
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    Affiliations:
    1 Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, People’s Republic of China
    2 Department of Physics, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, People’s Republic of China
    3 Department of Chemistry, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, People’s Republic of China
    4 Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong, People’s Republic of China
    Appl. Phys. Lett. 72, 2701 (1998); http://dx.doi.org/10.1063/1.121104
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/content/aip/journal/apl/72/21/10.1063/1.121104
1998-05-25
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the feasibility of using ultraviolet/ozone grown oxide as an atomic interdiffusion barrier in Ge/GaAs heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/21/10.1063/1.121104
10.1063/1.121104
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