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Direct measurement of ballistic electron distribution and relaxation length in InP-based heterojunction bipolar transistors using electroluminescence spectroscopy
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10.1063/1.121682
/content/aip/journal/apl/72/21/10.1063/1.121682
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/21/10.1063/1.121682
/content/aip/journal/apl/72/21/10.1063/1.121682
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/content/aip/journal/apl/72/21/10.1063/1.121682
1998-05-25
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct measurement of ballistic electron distribution and relaxation length in InP-based heterojunction bipolar transistors using electroluminescence spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/21/10.1063/1.121682
10.1063/1.121682
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