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Stacked high-ε gate dielectric for gigascale integration of metal–oxide–semiconductor technologies
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10.1063/1.121473
/content/aip/journal/apl/72/22/10.1063/1.121473
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/22/10.1063/1.121473
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/content/aip/journal/apl/72/22/10.1063/1.121473
1998-06-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stacked high-ε gate dielectric for gigascale integration of metal–oxide–semiconductor technologies
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/22/10.1063/1.121473
10.1063/1.121473
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