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Fine structure of near-band-edge photoluminescence in -irradiated GaN grown on SiC
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10.1063/1.121474
/content/aip/journal/apl/72/22/10.1063/1.121474
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/22/10.1063/1.121474
/content/aip/journal/apl/72/22/10.1063/1.121474
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/content/aip/journal/apl/72/22/10.1063/1.121474
1998-06-01
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/22/10.1063/1.121474
10.1063/1.121474
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