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Electrical characterization of the threshold fluence for extended defect formation in -type silicon implanted with MeV Si ions
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10.1063/1.121535
/content/aip/journal/apl/72/23/10.1063/1.121535
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/23/10.1063/1.121535
/content/aip/journal/apl/72/23/10.1063/1.121535
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/content/aip/journal/apl/72/23/10.1063/1.121535
1998-06-08
2015-05-04
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of the threshold fluence for extended defect formation in p-type silicon implanted with MeV Si ions
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/23/10.1063/1.121535
10.1063/1.121535
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