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Relaxed alloy layers with low threading dislocation densities grown on low-temperature Si buffers
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10.1063/1.121579
/content/aip/journal/apl/72/24/10.1063/1.121579
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/24/10.1063/1.121579
/content/aip/journal/apl/72/24/10.1063/1.121579
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/content/aip/journal/apl/72/24/10.1063/1.121579
1998-06-15
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/24/10.1063/1.121579
10.1063/1.121579
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