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Nonradiative recombination at GaAs homointerfaces fabricated using an As cap deposition/removal process
1.S. P. Kowalczyk, D. L. Miller, J. R. Waldrop, P. G. Newman, and R. W. Grant, J. Vac. Sci. Technol. 19, 255 (1981).
2.Y. Fan, I. Karpov, G. Bratina, L. Sorba, W. Gladfelter, and A. Franciosi, J. Vac. Sci. Technol. B 14, 623 (1996).
3.M. Passlack, M. Hong, E. F. Schubert, G. J. Zydzik, J. P. Mannaerts, W. S. Hobson, and T. D. Harris, J. Appl. Phys. 81, 7647 (1997).
4.For an introduction to recombination processes see, e.g., R. K. Ahrenkiel and M. S. Lundstrom, Minority Carriers in III-V Semiconductors: Physics and Applications (Academic, Boston, 1993).
5.See, for example, A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967).
6.O. Brandt, H. Yang, and K. H. Ploog, Phys. Rev. B 54, R5215 (1996).
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