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Film thickness and composition monitoring during growth by molecular beam epitaxy using alpha particle energy loss
1.C. H. Kuo, M. D. Boonzaayer, M. F. DeHerrera, D. K. Schroder, G. N. Maracas, and B. Johs, J. Cryst. Growth 175/176, 281 (1997).
2.D. E. Aspnes, Solid State Commun. 101, 85 (1997);
2.D. E. Aspnes, J. Vac. Sci. Technol. A 14, 960 (1996).
3.I. Kelson, Y. Levy, and E. Redmard, J. Phys. D 28, 100 (1995).
4.I. Kelson, Y. Levy, D. Racah, E. Redmard, M. Beaudoin, T. Pinnington, T. Tiedje, and U. Giesen, J. Phys. D 30, 131 (1997).
5.M. Beaudoin, J. A. MacKenzie, T. Pinnington, S. Ritchie, T. Tiedje, Z. Gelbart, U. Giesen, I. Kelson, Y. Levy, A. J. SpringThorpe, and R. Streater, Surf. Coat. Technol. 94/95, 374 (1998).
6.J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
7.D. Vuillaume and D. Stiévenard, in Properties of Impurity States in Superlattice Semiconductors, edited by C. Y. Fong, I. P. Batra, and S. Ciraci, NATO ASI Series B: Physics (Plenum, New York, 1988), Vol. 183, p. 118.
8.J. C. Bean, in High-Speed Semiconductor Devices, edited by S. M. Sze (Wiley, New York, 1990), pp. 13–55.
9.P. van der Sluis, J. Phys. D 26, 188 (1993).
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