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Electrical characterization of defects introduced in during electron-beam deposition of Sc Schottky barrier diodes
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10.1063/1.120967
/content/aip/journal/apl/72/9/10.1063/1.120967
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/9/10.1063/1.120967
/content/aip/journal/apl/72/9/10.1063/1.120967
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/content/aip/journal/apl/72/9/10.1063/1.120967
1998-03-02
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/9/10.1063/1.120967
10.1063/1.120967
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