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Low frequency negative capacitance behavior of molecular beam epitaxial GaAs -low temperature- structure with low temperature layer grown at a low temperature
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10.1063/1.120971
/content/aip/journal/apl/72/9/10.1063/1.120971
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/9/10.1063/1.120971
/content/aip/journal/apl/72/9/10.1063/1.120971
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/content/aip/journal/apl/72/9/10.1063/1.120971
1998-03-02
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/9/10.1063/1.120971
10.1063/1.120971
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