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Characterization of Si junctions fabricated by direct wafer bonding in ultra-high vacuum
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10.1063/1.120975
/content/aip/journal/apl/72/9/10.1063/1.120975
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/9/10.1063/1.120975
/content/aip/journal/apl/72/9/10.1063/1.120975
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/content/aip/journal/apl/72/9/10.1063/1.120975
1998-03-02
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of Si pn junctions fabricated by direct wafer bonding in ultra-high vacuum
http://aip.metastore.ingenta.com/content/aip/journal/apl/72/9/10.1063/1.120975
10.1063/1.120975
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