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Use of Kubo formalism to study transport beyond the Born approximation: Application to low-temperature transport in Si metal–oxide–semiconductor field-effect transistors
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10.1063/1.122209
/content/aip/journal/apl/73/11/10.1063/1.122209
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/11/10.1063/1.122209
/content/aip/journal/apl/73/11/10.1063/1.122209
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/content/aip/journal/apl/73/11/10.1063/1.122209
1998-09-14
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Use of Kubo formalism to study transport beyond the Born approximation: Application to low-temperature transport in Si metal–oxide–semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/11/10.1063/1.122209
10.1063/1.122209
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