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Neutron reflectometry, x-ray reflectometry, and spectroscopic ellipsometry characterization of thin on Si
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6.For a theory of reflectivity data and modeling, see M. Born and E. Wolf, Principles of Optics, 6th ed. (Pergamon, Elmsford, NY, 1980), and Ref. 6.
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10.A relatively new technique for direct data inversion which requires reference layers exists, which is modeled independently and provides unique results, see C. F. Majkrzak, N. F. Berk, J. A. Dura, S. K. Satija, A. Karim, J. Pedulla, and R. D. Deslattes, Physica B 248, 338 (1998).
11.N. V. Nguyen, D. Chandler-Horowitz, J. G. Pellegrino, and P. M. Amirtharaj, in Semiconductor Characterization: Present Status and Future Needs, edited by W. M. Bullis, D. G. Seiler, and A. C. Diebold (AIP Press, Woodbury, NY, 1996), pp. 438–442.
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