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Effect of curvature and stress on reaction rates at solid interfaces
1.See, e.g., D.-B. Kao, J. P. McVittie, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices ED-35, 25 (1988).
2.W. C. Johnson, J. Appl. Phys. 68, 1252 (1990);
2.F. d’Heurle (private communication).
3.C. H. Chiu and L. B. Freund, Mater. Res. Soc. Symp. Proc. 436, 517 (1997);
3.W. Barvosa-Carter, M. J. Aziz, L. J. Gray, and T. Kaplan, Phys. Rev. Lett. 81, 1445 (1998).
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5.Two distinct curvature terms have been suggested previously, in Ref. 3. However, there they are apparently introduced as an assumption of the model, rather than being derived on explicit physical grounds as we do here.
6.By assumption, the scalar product is invariant under rotations about the interface normal. This is sufficient to show that must be a scalar times the identity matrix.
7.X. Chen and J. M. Gibson, Appl. Phys. Lett. 70, 1462 (1997).
8.V. Senez et al., IEEE Trans. Electron Devices 43, 720 (1996).
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