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Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal–oxide–semiconductor field-effect transistors
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10.1063/1.122476
/content/aip/journal/apl/73/17/10.1063/1.122476
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/17/10.1063/1.122476
/content/aip/journal/apl/73/17/10.1063/1.122476
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/content/aip/journal/apl/73/17/10.1063/1.122476
1998-10-26
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal–oxide–semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/17/10.1063/1.122476
10.1063/1.122476
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