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Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide
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10.1063/1.122489
/content/aip/journal/apl/73/17/10.1063/1.122489
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/17/10.1063/1.122489
/content/aip/journal/apl/73/17/10.1063/1.122489
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/content/aip/journal/apl/73/17/10.1063/1.122489
1998-10-26
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/17/10.1063/1.122489
10.1063/1.122489
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