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High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts
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10.1063/1.122701
/content/aip/journal/apl/73/21/10.1063/1.122701
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/21/10.1063/1.122701
/content/aip/journal/apl/73/21/10.1063/1.122701
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/content/aip/journal/apl/73/21/10.1063/1.122701
1998-11-23
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/21/10.1063/1.122701
10.1063/1.122701
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