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Highly reflective quarter-wave reflectors grown by metal organic chemical vapor deposition
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8.Since the total gas flow was increased from 19.5 to 36 l/min, the surface temperature of substrates must have been decreased. To compensate for this effect, we increased the substrate temperature from 1075 to 1092 °C.
9.Both quarter-wave GaN and layers were grown without changing the gas flow rates so that abrupt interfaces should be obtained.
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