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Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
1.M. K. Bruel, Electron. Lett. 31, 1201 (1995).
2.M. K. Weldon, V. E. Marsico, Y. J. Chabal, A. Agarwal, D. J. Eaglesham, J. Sapjeta, W. L. Brown, D. C. Jacobson, Y. Caudano, S. B. Christman, and E. E. Chaban, J. Vac. Sci. Technol. B 15, 1065 (1997);
2.Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, edited by C. E. Hunt, H. Baumgart, S. S. Iyer, T. Abe, and U. Gösele (The Electrochemical Society, Pennington, NJ, 1997), PV 97-36, p. 229.
3.A. Agarwal, T. E. Haynes, V. C. Venezia, O. W. Holland, and D. J. Eaglesham, Appl. Phys. Lett. 72, 1086 (1998);
3.V. C. Venezia, T. E. Haynes, A. Agarwal, D. J. Eaglesham, O. W. Holland, M. K. Weldon, and Y. J. Chabal, in Semiconductor Silicon 1998 (Proc. Electrochem. Soc.), edited by H. Huff, U. Gösele, and H. Tsuya (The Electrochemical Society, Pennington, NJ, 1998), p. 1385.
4.D. M. Follstaedt, S. M. Myers, G. A. Peterson, and J. W. Medernach, J. Electron. Mater. 25, 151 (1995);
4.H. J. Stein, S. M. Myers, and D. M. Follstaedt, J. Appl. Phys. 73, 2755 (1992);
4.S. M. Myers, D. M. Follstaedt, H. J. Stein, and W. R. Wampler, Phys. Rev. B 47, 13380 (1993).
5.B. Bech Nielsen, L. Hoffmann, and M. Budde, Mater. Sci. Eng., B 36, 259 (1996), and references therein.
6.M. Budde, B. Bech Nielsen, P. Leary, J. Goss, R. Jones, P. R. Briddon, S. Oberg, and S. J. Breuer, in Defects in Semiconductors, ICDS-19, 258-2, 35 (1997).
7.When using multiple internal reflection, enhancement of the vibrations normal to the interface occurs when concerted cracking takes place due to the lower effective dielectric constant of the resultant “open” region [see Y. J. Chabal, M. A. Hines, and D. Feijoo, J. Vac. Sci. Technol. A 13, 1719 (1995)]. Importantly, this enhancement is only detected when using p-polarized light. For the present data no enhancement was observed, although for other samples (particularly those with He and H co-implanted at the same depth) the mode was observed in a range spanning 2125–2135 cm−1, with a varying degree of enhancement, indicating that in these cases the defects are located in a region with a large dielectric perturbation, i.e., next to the largest internal cracks.
8.Although a similar frequency has also been reported for hydrogen-terminated platelets formed by exposure of Si to a H plasma [J. N. Heyman, J. W. Ager, E. E. Haller, N. M. Johnson, J. Walker, and C. M. Doland, Phys. Rev. B 23, 13363 (1992)], a companion mode was also observed at 2077 cm−1 in those samples, which effectively precludes such an assignment here.
9.Y. Caudano, M. K. Weldon, Y. J. Chabal, B. B. Stefanov, K. Raghavachari, D. C. Jacobson, S. B. Christman, and E. E. Chaban, in Ref. 2, p. 365.
10.S. K. Estreicher, J. L. Hastings, and P. A. Fedders, Phys. Rev. B 57, R12663 (1998).
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