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Electrical characterization of two deep electron traps introduced in epitaxially grown during He-ion irradiation
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10.1063/1.122881
/content/aip/journal/apl/73/25/10.1063/1.122881
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/25/10.1063/1.122881
/content/aip/journal/apl/73/25/10.1063/1.122881
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/content/aip/journal/apl/73/25/10.1063/1.122881
1998-12-21
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/25/10.1063/1.122881
10.1063/1.122881
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