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Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
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10.1063/1.122929
/content/aip/journal/apl/73/26/10.1063/1.122929
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/26/10.1063/1.122929
/content/aip/journal/apl/73/26/10.1063/1.122929
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/content/aip/journal/apl/73/26/10.1063/1.122929
1998-12-28
2014-07-11
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/26/10.1063/1.122929
10.1063/1.122929
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