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Oxidation resistance of tantalum–ruthenium dioxide diffusion barrier for memory capacitor bottom electrodes
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10.1063/1.121822
/content/aip/journal/apl/73/3/10.1063/1.121822
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/3/10.1063/1.121822
/content/aip/journal/apl/73/3/10.1063/1.121822
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/content/aip/journal/apl/73/3/10.1063/1.121822
1998-07-20
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxidation resistance of tantalum–ruthenium dioxide diffusion barrier for memory capacitor bottom electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/3/10.1063/1.121822
10.1063/1.121822
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