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Resistivity anisotropy in ordered grown at 640 °C
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10.1063/1.121837
/content/aip/journal/apl/73/3/10.1063/1.121837
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/3/10.1063/1.121837
/content/aip/journal/apl/73/3/10.1063/1.121837
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/content/aip/journal/apl/73/3/10.1063/1.121837
1998-07-20
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistivity anisotropy in ordered InxGa1−xP grown at 640 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/3/10.1063/1.121837
10.1063/1.121837
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