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Nondestructive evaluation of carrier concentration in the channel layer of heterostructure field-effect transistors by Raman scattering
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10.1063/1.121838
/content/aip/journal/apl/73/3/10.1063/1.121838
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/3/10.1063/1.121838
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/content/aip/journal/apl/73/3/10.1063/1.121838
1998-07-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nondestructive evaluation of carrier concentration in the channel layer of In0.5Ga0.5P/In0.2Ga0.8As/GaAs heterostructure field-effect transistors by Raman scattering
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/3/10.1063/1.121838
10.1063/1.121838
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