Broadening of near-band-gap photoluminescence in films
1.B. A. Monemar, in Gallium Nitride (GaN) I, edited by J. I. Pankove and T. D. Moustakas (Academic, San Diego, CA, 1998), pp. 311–334.
2.T. N. Morgan, Phys. Rev. 139, A343 (1965).
3.T. D. Moustakas, in Gallium Nitride and Related Materials, Mater. Res. Soc. Symp. Proc. 395, edited by F. A. Ponce, R. D. Dupuis, S. Nakamura, J. A. Edmond (MRS, Pittsburgh, PA 1997), pp. 111–122.
4.T. D. Moustakas, R. Molnar, T. Lei, G. Menon, and C. R. Eddy, in Wide Band Gap Semiconductors, Mater. Res. Soc. Symp. Proc. 242, edited by T. D. Moustakas, J. I. Pankove, Y. Hamakawa (MRS, Pittsburgh, PA, 1992), pp. 427–432.
5.J. D. De-Sheng, Y. Makita, K. Ploog, and H. J. Queisser, J. Appl. Phys. 53, 999 (1982).
6.V. A. Vilkotskii, D. S. Domanevskii, R. D. Kakanakov, V. V. Krasovskii, and V. D. Tkachev, Phys. Status Solidi A 91, 71 (1979).
7.S. M. Ryvkin, Phys. Status Solidi 11, 285 (1965).
8.The density of states function for band tails in a semiconductor has a Gaussian form. Thus, the lower energy line shape of the photoluminescence due to direct transitions between the conduction and valence band tails is expected to be Gaussian. Furthermore, the width of the photoluminescence line is proportional to the second moment of the Gaussian density of states function, which has a slower dependence on impurity concentration than a 2/3 power.
9.G. D. Mahan, Phys. Rev. 153, 882 (1967).
10.C. F. Klingshirn, Semiconductor Optics (Springer, Berlin, 1997), p. 307.
11.N. G. Weinmann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1998).
12.E. F. Schubert, I. D. Goepfert, W. Grieshaber, and J. M. Redwing, Appl. Phys. Lett. 71, 921 (1997).
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month