1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
Rent:
Rent this article for
USD
10.1063/1.121911
/content/aip/journal/apl/73/4/10.1063/1.121911
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/4/10.1063/1.121911
/content/aip/journal/apl/73/4/10.1063/1.121911
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/73/4/10.1063/1.121911
1998-07-27
2014-10-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/4/10.1063/1.121911
10.1063/1.121911
SEARCH_EXPAND_ITEM