No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photon generation by silicon diodes in avalanche breakdown
1.R. Newman, Phys. Rev. 100, 700 (1955).
2.A. G. Chynoweth and K. G. McKay, Phys. Rev. 102, 369 (1956).
3.A. Toriumi, M. Yoshimi, M. Iwase, Y. Akitama, and K. Taniguchi, IEEE Trans. Electron Devices 34, 1501 (1987).
4.W. Haecker, Phys. Status Solidi A 25, 301 (1974).
5.G. Deboy and J. Kolzer, Semicond. Sci. Technol. 9, 1017 (1993).
6.P. A. Wolff, J. Phys. Chem. Solids 16, 184 (1960).
7.D. K. Gautam, W. S. Khokle, and K. B. Garg, Solid-State Electron. 31, 219 (1988).
8.D. K. Gautam, W. S. Khokle, and K. B. Garg, Solid-State Electron. 31, 1119 (1988).
9.The photomultiplier output is constant and does not require correction over the measurement range.
10.N. Akil, D. V. Kerns, Jr., S. E. Kerns, A. Hoffmann, and J.-P. Charles (unpublished).
11.T. Figielski and A. Torum, International Conference on Physics of Semiconductors, Exeter (Pergamon, London, 1962), pp. 863–868.
12.G. A. Baraff, Phys. Rev. 133, 26 (1964).
13.The representation of the theory of Gautam et al. presented here differs from that published by the authors. The authors apparently use a constant value for the index of refraction of silicon. The results presented here use the photon energy-specific values for the index of refraction given in Handbook of Optical Constants of Solids, edited by Edward D. Palik (Academic, Orlando, 1985), p. 547.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month