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Oxide thickness dependence of energy shifts in the Si levels for the structure, and its elimination by a palladium overlayer
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10.1063/1.122042
/content/aip/journal/apl/73/7/10.1063/1.122042
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/7/10.1063/1.122042
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/content/aip/journal/apl/73/7/10.1063/1.122042
1998-08-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO2/Si structure, and its elimination by a palladium overlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/7/10.1063/1.122042
10.1063/1.122042
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