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Hydrogen passivation of silicon carbide by low-energy ion implantation
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10.1063/1.122047
/content/aip/journal/apl/73/7/10.1063/1.122047
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/7/10.1063/1.122047
/content/aip/journal/apl/73/7/10.1063/1.122047
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/content/aip/journal/apl/73/7/10.1063/1.122047
1998-08-17
2014-07-10
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scitation|Hydrogen passivation of silicon carbide by low-energy ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/7/10.1063/1.122047
10.1063/1.122047
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