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Si adatom surface migration biasing by elastic strain gradients during capping of Ge or hut islands
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10.1063/1.122082
/content/aip/journal/apl/73/8/10.1063/1.122082
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/8/10.1063/1.122082
/content/aip/journal/apl/73/8/10.1063/1.122082
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/content/aip/journal/apl/73/8/10.1063/1.122082
1998-08-24
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1−xGex hut islands
http://aip.metastore.ingenta.com/content/aip/journal/apl/73/8/10.1063/1.122082
10.1063/1.122082
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