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The influence of the junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode
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10.1063/1.123555
/content/aip/journal/apl/74/10/10.1063/1.123555
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/10/10.1063/1.123555
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/content/aip/journal/apl/74/10/10.1063/1.123555
1999-03-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/10/10.1063/1.123555
10.1063/1.123555
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