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Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy
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10.1063/1.123559
/content/aip/journal/apl/74/10/10.1063/1.123559
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/10/10.1063/1.123559
/content/aip/journal/apl/74/10/10.1063/1.123559
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/content/aip/journal/apl/74/10/10.1063/1.123559
1999-03-08
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/10/10.1063/1.123559
10.1063/1.123559
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