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Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
1.M. Sugawara, K. Mukai, and H. Shoji, Appl. Phys. Lett. 71, 2791 (1997).
2.M. Sugawara, Semiconductors and Semimetals (Academic, New York, 1999), Vol. 60, Chap. 1.
3.K. Mukai, Y. Nakata, H. Shoji, M. Sugawara, K. Otsubo, T. Futatsugi, Y. Sugiyama, N. Yokoyama, and H. Ishikawa, Proceedings of the Tenth International Conference on Indium Phosphide and Related Materials, Tsukuba, 11–15 May 1998, pp. 345.
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5.Y. Nakata, Y. Sugiyama, K. Mukai, T. Futatsugi, H. Shoji, M. Sugawara, H. Ishikawa, and N. Yokoyama, ’98 Proceedings of International Conference on Compound Semiconductors (Nara, 1998).
6.L. Harris, D. J. Mowbray, M. S. Skolnic, M. Hopkinson, and G. Hill, Appl. Phys. Lett. 73, 969 (1998).
7.The thermal coupling and carrier transfer among isolated dots to explain the temperature dependence of threshold currents and lasing spectra was discussed in A. E. Zhukov, Jpn. J. Appl. Phys., Part 1 37, 4216 (1997), and
7.D. L. Huffaker, Appl. Phys. Lett. 73, 2564 (1998). However, this model has a problem in that the carrier transfer can not follow the stimulated emission process with a cavity photon lifetime.
8.H. Ishikawa, Semiconductors and Semimetals (Academic, New York, 1999), Vol. 60, Chap. 7.
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