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A simple lateral transport device of strongly interacting electron and hole layers
1.U. Sivan, P. M. Solomon, and H. Shtrikman, Phys. Rev. Lett. 68, 1196 (1992).
2.P. M. Solomon, P. J. Price, D. J. Frank, and D. C. Latulipe, Phys. Rev. Lett. 63, 2508 (1989);
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4.A short review may be found in P. B. Littlewood and X. J. Zhu, Phys. Scr. 68, 56 (1996);
4.for a recent transport measurement in an InAs–GaSb system, see L. J. Cooper, N. K. Patel, V. Drouot, E. H. Linfield, D. A. Ritchie, and M. Pepper, Phys. Rev. B 57, 11915 (1998).
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8.The presence of a 3DHG adjacent to the electron–hole double layer is similar to the situation described in V. I. Yudson, Phys. Rev. Lett. 77, 1564 (1996).
9.S. Shapira, U. Sivan, P. M. Solomon, E. Buchstab, M. Tischler, and G. Ben Yoseph, Phys. Rev. Lett. 77, 3181 (1996).
10.The simplest being a pn junction. A pnp junction was used to facilitate separate contacts in a lateral transport device in K. Hubner and W. Shockley, Phys. Rev. Lett. 4, 504 (1960).
11.This length is determined by a combination of other factors, depending on the configuration: the breakdown field in GaAs, the electric field generated by the highest charge density attainable in a two-dimensional layer, and the depletion length for a surface Schottky barrier in the high limit of typical doping densities.
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13.The device area excluding the voltage contacts is 2400 μ2.
14.We use the inelastic electron–electron scattering time in a ballistic system, confirmed experimentally by measuring dephasing in: A. Yacoby, U. Sivan, C. P. Umbach, and J. M. Hong, Phys. Rev. Lett. 66, 1938 (1991).
15.S. Shapira, DSc. thesis, Technion, Haifa, Israel 1996.
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