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A simple lateral transport device of strongly interacting electron and hole layers
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4.A short review may be found in P. B. Littlewood and X. J. Zhu, Phys. Scr. 68, 56 (1996);
4.for a recent transport measurement in an InAs–GaSb system, see L. J. Cooper, N. K. Patel, V. Drouot, E. H. Linfield, D. A. Ritchie, and M. Pepper, Phys. Rev. B 57, 11915 (1998).
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8.The presence of a 3DHG adjacent to the electron–hole double layer is similar to the situation described in V. I. Yudson, Phys. Rev. Lett. 77, 1564 (1996).
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10.The simplest being a pn junction. A pnp junction was used to facilitate separate contacts in a lateral transport device in K. Hubner and W. Shockley, Phys. Rev. Lett. 4, 504 (1960).
11.This length is determined by a combination of other factors, depending on the configuration: the breakdown field in GaAs, the electric field generated by the highest charge density attainable in a two-dimensional layer, and the depletion length for a surface Schottky barrier in the high limit of typical doping densities.
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13.The device area excluding the voltage contacts is 2400 μ2.
14.We use the inelastic electron–electron scattering time in a ballistic system, confirmed experimentally by measuring dephasing in: A. Yacoby, U. Sivan, C. P. Umbach, and J. M. Hong, Phys. Rev. Lett. 66, 1938 (1991).
15.S. Shapira, DSc. thesis, Technion, Haifa, Israel 1996.
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