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Technique for producing highly planar metal–oxide–semiconductor field effect transistor channels
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10.1063/1.123689
/content/aip/journal/apl/74/13/10.1063/1.123689
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/13/10.1063/1.123689
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/content/aip/journal/apl/74/13/10.1063/1.123689
1999-03-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/13/10.1063/1.123689
10.1063/1.123689
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