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Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics
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10.1063/1.123728
/content/aip/journal/apl/74/14/10.1063/1.123728
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/14/10.1063/1.123728
/content/aip/journal/apl/74/14/10.1063/1.123728
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/content/aip/journal/apl/74/14/10.1063/1.123728
1999-04-05
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/14/10.1063/1.123728
10.1063/1.123728
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