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Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources
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10.1063/1.123747
/content/aip/journal/apl/74/14/10.1063/1.123747
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/14/10.1063/1.123747
/content/aip/journal/apl/74/14/10.1063/1.123747
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/content/aip/journal/apl/74/14/10.1063/1.123747
1999-04-05
2014-11-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/14/10.1063/1.123747
10.1063/1.123747
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