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Spin-polarized current in semimagnetic semiconductor heterostructures
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5.R. Wessel and I. D. Vagner, Superlattices Microstruct. 8, 443 (1990). In the latter work the transverse magnetization was assumed nonzero and independent of time. This does not account properly for thermal fluctuation effects.
6.Actually, an effective molar fraction is used to account for the antiferromagnetic pair formation.
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10.As a conservative approximation that underestimates the spin-flip scattering, we have taken as the molar fraction, assuming the antiferromagnetic pair states not taking part in the scatterings. See, e.g., G. Bastard and L. L. Chang, Phys. Rev. B 41, 7899 (1990).
11.Experimental data indicate long correlation time such that the width of the transmission coefficient in Eq. (5) is much larger than the Lorentzian width in the expression Eq. (3) for For the results shown the Lorentzian was used as a δ function.
12.This is a minor effect for the triple-barrier SMS system because, at relatively low temperatures, the condition for resonant tunneling is satisfied only for states that are deep into the emitter Fermi sea and away from the collector Fermi level (see inset in Fig. 2).
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