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Tunneling magnetoresistance at up to 270 K in junctions with 1.6-nm-thick barriers
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10.1063/1.123002
/content/aip/journal/apl/74/2/10.1063/1.123002
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/2/10.1063/1.123002
/content/aip/journal/apl/74/2/10.1063/1.123002
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/content/aip/journal/apl/74/2/10.1063/1.123002
1999-01-11
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunneling magnetoresistance at up to 270 K in La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 junctions with 1.6-nm-thick barriers
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/2/10.1063/1.123002
10.1063/1.123002
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