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Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique
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10.1063/1.124110
/content/aip/journal/apl/74/21/10.1063/1.124110
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/21/10.1063/1.124110
/content/aip/journal/apl/74/21/10.1063/1.124110
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/content/aip/journal/apl/74/21/10.1063/1.124110
1999-05-24
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/21/10.1063/1.124110
10.1063/1.124110
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