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Raman characterization of deposition on undoped and layers for InP high electron mobility transistor applications
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10.1063/1.124111
/content/aip/journal/apl/74/21/10.1063/1.124111
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/21/10.1063/1.124111
/content/aip/journal/apl/74/21/10.1063/1.124111
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/content/aip/journal/apl/74/21/10.1063/1.124111
1999-05-24
2014-10-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+Ga0.47In0.53As layers for InP high electron mobility transistor applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/74/21/10.1063/1.124111
10.1063/1.124111
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