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High rate etching of SiC using inductively coupled plasma reactive ion etching in -based gas mixtures
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10.1063/1.124986
/content/aip/journal/apl/75/15/10.1063/1.124986
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/15/10.1063/1.124986
/content/aip/journal/apl/75/15/10.1063/1.124986
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/content/aip/journal/apl/75/15/10.1063/1.124986
1999-10-11
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/15/10.1063/1.124986
10.1063/1.124986
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