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Surface micro-roughness and transport properties of Si delta-doped quantum wells grown by molecular-beam epitaxy on GaAs (001) and GaAs (111)B
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10.1063/1.125047
/content/aip/journal/apl/75/16/10.1063/1.125047
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/16/10.1063/1.125047
/content/aip/journal/apl/75/16/10.1063/1.125047
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/content/aip/journal/apl/75/16/10.1063/1.125047
1999-10-18
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface micro-roughness and transport properties of Si delta-doped GaAs/InxGa1−xAs/GaAs(0.1⩽×⩽0.25) quantum wells grown by molecular-beam epitaxy on GaAs (001) and GaAs (111)B
http://aip.metastore.ingenta.com/content/aip/journal/apl/75/16/10.1063/1.125047
10.1063/1.125047
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